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| PTF 10154 85 Watts, 1.93-1.99 GHz GOLDMOS (R) Field Effect Transistor Description The PTF 10154 is an internally matched 85-watt GOLDMOS FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This device operates at 43% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * * INTERNALLY MATCHED Guaranteed Performance at 1.93, 1.99 GHz, 28 V - Output Power = 85 Watts Min - Power Gain = 11 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability * * * * * Typical Power Output and Efficiency vs. Input Power 100 50 40 Power Output (Watts) Efficiency 60 40 20 0 0 3 6 9 12 15 30 Efficiency (%) x 80 A-12 101 3456 54 00 35 VDD = 28 V Power Output 20 10 0 IDQ = 1.15 A f = 1990 MHz Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 10 W, IDQ = 1.15 A, f = 1.96, 1.99 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1.15 A, f = 1.99 GHz) Drain Efficiency (VDD = 28 V, POUT = 90 W, IDQ = 1.15 A, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 90 W, IDQ = 1.15 A, f = 1.99 GHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. Symbol Gps P-1dB hD Y Min 10.0 85 -- -- Typ 11 -- 43 -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF 10154 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 -- 3.0 -- Typ -- -- -- 1.0 Max -- 5.0 5.0 -- Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 150 mA VDS = 10 V, ID = 2 A Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 20 200 365 2.08 -40 to +150 0.48 Unit Vdc Vdc C Watts W/C C C/W Typical Performance Narrowband Test Fixture Performance 12 Gain 50 9 Efficiency 40 6 60 Power Gain vs. Output Power 12 Efficiency Power Gain (dB) Gain (dB) 11 IDQ = 1.2 3 0 1900 1920 1940 -20 5 -10 Return Loss 10 -0 1960 1980 2000 Return Loss VDD = 28 V, IDQ = 1.15 A POUT = 85 W 30 10 IDQ = 0.6 IDQ = 0.3 9 VDD = 28 V f = 1990 MHz 10 100 8 1 Frequency (MHz) Output Power (Watts) 2 e Gate-Source Voltage vs. Case Temperature PTF 10154 Capacitance vs. Supply Voltage * Cds and Cgs (pF) x 350 300 250 200 150 100 50 0 0 10 20 30 25 Gate-Source Voltage (V) x 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 30 80 130 Case Temperature (C) Voltage normalized to 1.0 V Series show current (A) 0.600 2.075 3.550 5.025 6.500 7.975 VGS = 0 V f = 1 MHz 20 Cds Crss 40 10 5 0 Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these results. Impedance Data NER D S TO W AR D GE VDD = 28 V, POUT = 85 W, IDQ = 1.15 A Z0 = 50 W Z Source Z Load - WAVE LEN GTH Z Source 1930 MHz 1990 MHz 0.0 TOW AR D LOAD G TH S G S 1930 MHz 1990 MHz Z Load Frequency GHz 1930 1960 1990 R Z Source W jX 3.0 2.6 1.2 R 1.4 1.4 1.4 2.9 2.5 2.1 Z Load W jX -0.2 -0.9 -1.5 0.1 3 <--- WA V E LE N 0.1 Crss Cgs 15 0 .1 PTF 10154 Test Circuit e Test Circuit Block Diagram for f = 1.93-1.99 GHz Q1 PTF 10154 LDMOS RF Transistor 1.96 GHz IPM (OHMS) 0.105 l 1.96 GHz Microstrip 50 W 0.119 l 1.96 GHz Microstrip 50 W 0.073 l 1.96 GHz Microstrip 76.64 W 0.094 l 1.96 GHz Microstrip 9.73 W 0.126 l 1.96 GHz Microstrip 6.67 W 0.614 l 1.96 GHz Microstrip 9.62 W 0.170 l 1.96 GHz Microstrip 64.30 W 0.050 l 1.96 GHz Microstrip 50 W 0.073 l 1.96 GHz Microstrip 50 W C1, C9 Capacitor,10F Digi-Key pcs 6106 C2, C10 Capacitor,0.1F,50V Digi-Key PCC103BCT C3, C4, C7, C11 Capacitor,10pF ATC 100 b C5 Capacitor, variable 0.3-3.5pF JACO johanson 5801 C6 Capacitor,100F,50V Digi-Key P5182-ND C8 Capacitor,0.1F,50V Digi-Key P4525-ND J1, J2 Connector, SMA female,panel mount 1301-rpm 513 412/53 L1 Chip inductor,2.7H L2 Ferrite, 6mm phillips 53/3/4.6-452 L3, L4 Inductor ,8nH coilcraft 0805CS-080 jbc R1, R2 Resistor, 220 ohm Digi-Key 220 qbk R3 Resistor, 1 ohm DIGI-KEY 1.0 qbk Circuit Board 0.050", 2 OZ Copper rogers corporation, TMM6 l1 l2 l3 l4 l5 l6 l7 l8 l9 Parts Layout (not to scale) 4 e Package Mechanical Specifications Package 20248 PTF 10154 Primary Dimensions are in inches, altermate dimensions are mm. Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LP (c) 1999, 2000 Ericsson Inc. EUS/KR 1522-PTF 10154 Uen Rev. PA3 12-18-00 5 |
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